Abstract
This work explores how thermally induced instabilities driven by the oscillatory motion of a heated fluid affect the growth of a semiconductor crystal. The mechanisms governing interaction between the interface temperature and its growth will be presented. It will be shown that the dynamic characteristic growth front can be described by a nonlinear differential equation. Preliminary results of our analysis suggest that morphological defects in bulk materials can be attributed to the accelerated growth rate that occurs in response to high unsteady temperature gradients. The theory formulated suggests methods that could be used in controlling quality of semiconductor crystals. Finally, the implications of this theory in formulating better processes for manufacturing bulk semiconductor materials will be outlined. [Work supported by Analog Devices Professorship.]
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