Abstract
Ag/Bi4Ti3O12/p-Si heterostructures were fabricated by Sol-Gel method with rapid thermal annealing techniques. The effects of oriented growth on ferroelectric characteristics and electrical properties of Bi4Ti3O12 film were investigated. Bi4Ti3O12 films on bare p-Si exhibit preferred c-axis-orientation with the increase of annealing temperature, which would impair the ferroelectric properties but help to drop down the leakage current density of Bi4Ti3O12 films. The Polarization-Voltage curves and the electrical characteristics curves show that the Bi4Ti3O12 films annealed at 650 ∘C for 5 min have good ferroelectric and electrical properties with a remanent polarization of 8.3 μC/cm2 and a leakage current density of < 5 × 10−9 A/cm2 at 6 V, which demonstrate that the Ag/Bi4Ti3O12/p-Si heterostructure by Sol-Gel method with rapid thermal annealing techniques is a promising configuration for MFS-FETs applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Materials Science: Materials in Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
