Abstract

Polycrystalline NixFe<SUB>3-x</SUB>O₄ thin films prepared by using a sol-gel process exhibited phase-pure spinel (Fd3m) structure for the Ni composition up to x = 1.0. X-ray photoemission spectroscopy (XPS) and Raman spectroscopy investigations revealed that Ni ions mostly have valence of +2 and occupy the octahedral sites of the cationic sublattice. The NixFe<SUB>3-x</SUB>O₄ films exhibited higher electrical resistivity than that of Fe₃O₄ below 300 K. The increase in the resistivity is primarily ascribed to decrease in Fe<SUP>2+</SUP>-Fe<SUP>3+</SUP> polaronic hopping rate in the octahedral sites due to the increase in the octahedral Ni<SUP>2+</SUP> population.

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