Abstract
In laser structures where the active region consists of several quantum wells, non-uniform charge injection can occur. We examine the consequences of non-uniform charge injection on gain, threshold current, and linewidth enhancement factor. Non-uniform charge injection in a InP-based multiple quantum well laser was considered in order to analyze effects on gain, threshold current, and linewidth enhancement factor. We find that although the best values for gain, threshold current and linewidth enhancement factor occur under uniform charge injection conditions, these parameters do not suffer significant degradation under even highly non-uniform charge injection.
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