Abstract
First, graphene is directly grown on nickel foil without additional catalysts by chemical vapor deposition (CVD). Next, the graphene is modified by nitrogen-doping and alumina is deposited onto the graphene by magnetron sputtering. The charge specific capacity of N-doped graphene is higher than that of graphene since 2 Theta of in situ XRD characteristic peaks for N-doped graphene moves toward a lower angle (about 24) which is smaller than that (about 25) for graphene, then the gap between graphene layers for N-doped graphene is larger than that for graphene according to Bragg’s Law and N-doped graphene demonstrates the additional in situ XRD characteristic peak (LiC6) in comparison to graphene only with the in situ XRD characteristic peak (LiC12). Furthermore, because 2 Theta of in situ XRD characteristic peaks for Al2O3/graphene also moves toward a lower angle (about 24) and Al2O3/graphene also shows the additional in situ XRD characteristic peak (LiC6), the charge specific capacity of Al2O3/graphene is also higher than that of graphene.
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