Abstract
By indentation at room temperature followed by annealing at high temperatures, the pinning effect of nitrogen on dislocations in nitrogen-doped Czochralski silicon (NCZ Silicon) has been studied. Experimental results showed that dislocations in NCZ Silicon moved slower and shorter than those in common Czochralski silicon (CZ Silicon) during the annealing. The results also indicated that the activation energy of the dislocations in NCZ Silicon was higher than that in CZ Silicon. The stress relaxing mechanism is discussed.
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