Abstract
ZrNx (x = 0.67–1.38) films were fabricated through direct current magnetron sputtering by a varying nitrogen flow ratio [N2/(Ar + N2)] ranging from 0.4 to 1.0. The structural variation, bonding characteristics, and mechanical properties of the ZrNx films were investigated. The results indicated that the structure of the films prepared using a nitrogen flow ratio of 0.4 exhibited a crystalline cubic ZrN phase. The phase gradually changed to a mixture of crystalline ZrN and orthorhombic Zr3N4 followed by a Zr3N4 dominant phase as the N2 flow ratio increased up to >0.5 and >0.85, respectively. The bonding characteristics of the ZrNx films comprising Zr–N bonds of ZrN and Zr3N4 compounds were examined by X-ray photoelectron spectroscopy and were well correlated with the structural variation. With the formation of orthorhombic Zr3N4, the nanoindentation hardness and Young’s modulus levels of the ZrNx (x = 0.92–1.38) films exhibited insignificant variations ranging from 18.3 to 19.0 GPa and from 210 to 234 GPa, respectively.
Highlights
Multifunctional ZrN films have been extensively investigated due to their characteristics including golden yellow appearance [1,2,3], high hardness [3,4,5,6], corrosion resistance [7,8,9], and wear resistance [10].The nitrogen flow rate in reactive sputtering affects the structure and composition of fabricated MeNx (Me = Ti, Zr, Hf) films [11,12,13], which varied the characteristics of these films
The B1 structure is a familiar structure for transition metal nitrides, in which N occupies the interstitial sites of close-packed metal atoms
N-rich compounds such as Ti3 N4, Zr3 N4, and Hf3 N4 have been reported [15]
Summary
The nitrogen flow rate in reactive sputtering affects the structure and composition of fabricated MeNx (Me = Ti, Zr, Hf) films [11,12,13], which varied the characteristics of these films. The B1 structure is a familiar structure for transition metal nitrides, in which N occupies the interstitial sites of close-packed metal atoms. A wide composition range, with point defects in the B1 structure, was obtained for transition metal nitrides [14]. O-Zr3 N4 was reported as a transparent insulator [16,24], whereas c-Zr3 N4 with a cubic Th3 P4 -type structure was suggested as an alternating hard material [19,23]. Mattesini et al, [23]
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
