Effects of nitrogen content on the structure and electrical properties of high-k NdOxNy gate dielectrics

Abstract

This paper describes the structure and electrical properties of thin NdOxNy gate dielectrics deposited on Si(100) substrates through reactive rf sputtering. Atomic force microscopy and x-ray photoelectron spectroscopy were used to study the morphological and chemical features of these films as functions of the growth conditions (argon-to-nitrogen flow ratios of 20∕5, 15∕10, 10∕15, and 5∕20; temperatures ranging from 600to800°C). The NdOxNy gate dielectric prepared under an Ar∕N2 flow ratio of 10∕15 with subsequent annealing at 700°C exhibited the smallest capacitance equivalent thickness and the best electrical characteristics (gate leakage current, interface-trapped charge, and hysteresis voltage in the capacitance-voltage curves). We attribute this behavior to the optimal nitrogen content in this metal oxide film suppressing the amorphous silica and silicate at the NdOxNy∕Si interface and forming a smooth surface.