Abstract
The films of amorphous carbon with different amount of incorporated nitrogen are deposited by helical resonator plasma enhanced chemical vapor deposition using CH/sub 4/, Ar, and N/sub 2/ gas mixture. As the increase of nitrogen in the films, the optical band gap and sp/sup 3/ bond fraction decreased. The higher field emission current and the lower turn-on voltage are obtained from the sample of the higher nitrogen content. The increase of the conducting part of the films and the role of nitrogen as an electrical donor are responsible for the enhanced field emission.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
