Effects of nitrogen addition on morphology and mechanical property of DC arc plasma jet CVD diamond films

Abstract

Nitrogen-doped diamond films have been synthesized by 100 KW DC arc plasma jet chemical vapor deposition using a CH 4/Ar/H 2 gas mixture. The effect of nitrogen addition into the feed gases on the growth and surface morphology and mechanical property of diamond film was investigated. The reactant gas composition was determined by the gas flow rates. At a constant flow rate of hydrogen (5000 sccm) and methane (100 sccm), the nitrogen to carbon ratio (N/C) were varied from 0.06 to 0.68. The films were grown under a constant pressure (4 KPa) and a constant substrate temperature (1073 K). The deposited films were characterized by scanning electron microscopy, Raman spectroscopy and X-ray diffraction. The fracture strength of diamond films was tested by three point bending method. The results have shown that nitrogen addition to CH 4/H 2/Ar mixtures had led to a significant change of film morphology, growth rate, crystalline orientation, nucleation density and fracture strength for free-standing diamond films prepared by DC arc plasma jet.