Abstract
In this research, the growth of GaN thin films on c-plane sapphire (0001) substrates via two-step method without the assist of buffer layer and catalysts was demonstrated. First, gallium oxide (Ga2O3) thin films were deposited on sapphire substrates by radio frequency magnetron sputtering method. The deposited Ga2O3 thin films were then nitridated at various temperatures. In this research, attention is focused on the influence of nitridation temperatures on the structural and optical properties of the synthesized GaN thin films. It is revealed that 950 °C is the optimal nitridation temperature for synthesizing hexagonal wurtzite GaN thin film with preferential (0002) growth direction.
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