Abstract
(Na0.85K0.15)0.5Bi0.5Ti(1-x)Nb x O3 (NKBT-N100x) thin films were deposited on Pt/Ti/SiO2/Si(100) substrates by metal–organic decomposition method and annealed in oxygen atmosphere at 750 °C. The effects of niobium concentration on the microstructures, ferroelectric, piezoelectric, leakage current and mechanical properties of the NKBT-N100x (x = 0, 0.01, 0.03, 0.05) thin films have been investigated in detail. The NKBT-3N thin film has the largest remnant polarization (7 μC/cm2) and statistically averaged d 33eff (140 pm/V), the smallest leakage current, elasticity modulus (102.0 Gpa), hardness (5.1 Gpa) and residual stress (297.0 Mpa). The evaluation of residual stresses of these thin films will offer useful guidelines of safe working condition for their potential application in microelectromechanical system.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Materials Science: Materials in Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
