Abstract
Magnetic thin films of Ta/NiO/Ni81Fe19/NiO/Ta were fabricated by a magnetron sputtering method. The effects of NiO layer thickness and substrate temperature on the anisotropic magnetoresistance (AMR) and the magnetic field sensitivity of these Ni81Fe19 films have been investigated. The results show that the AMR of 20-nm Ni81Fe19 film with 4-nm NiO achieves 5.02% at 450°C, while the magnetic field sensitivity achieves 9.00% × 10−3 m A−1 at the same conditions. These enhanced 40% and 230% comparing with the film without NiO layer, respectively.
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