Abstract
Bi4Ti3−xNbxO12 ferroelectric thin films were fabricated on p-Si substrates by magnetron sputtering. The effects of Nb doping on microstructure and properties of Bi4Ti3−xNbxO12 films were investigated. Bi4Ti3−xNbxO12 films had the same structure as Bi4Ti3O12 with smaller and more uniform grains. The dielectric and ferroelectric properties of Bi4Ti3−xNbxO12 films were improved by Nb doping. Bi4Ti3−xNbxO12 films have better dielectric and ferroelectric properties with Pr = 16.5 μC/cm2, EC 290, low dielectric loss (<0.9%) and clockwise C–V curves with a memory window of 0.9 V when x = 0.03–0.045, while an excessive Nb doping would lead to bad dielectric and ferroelectric properties.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
