Abstract
Bi4Ti3-xNbxO12+x/2 (BNT) ceramics were prepared by a solid-state reaction method. Effects of Nb doping on dielectric and ferroelectric properties of BNT were investigated. XRD patterns show that Nb5+ substitutions do not change the phase structure. With the increase of Nb doping, dielectric constant and Curie temperature decrease gradually. At the same time, dielectric loss peaks become flatter and dielectric losses become smaller due to the decrease of oxygen vacancies derived from the introduction of Nb5+ at Ti4+ site in BNT. Remanent polarization Pr and coercive field EC of BNT ceramics are both larger than those of BIT without Nb doping. With the increase of Nb doping from 0 to 0.045, Pr increases to the largest value of 17 μC/cm2 and EC decreases to the lowest value of 87 kV/cm, but Pr will decrease when Nb doping content is over 0.045.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
