Abstract
In this research, a hybrid sol-gel method was used to fabricate Pb(Zr0.52Ti0.48)1−xNbxO3 PZT-based piezoelectric thick films. By preparing sol-gel solutions with different Nb concentrations (x = 0%–4%) and mixing them with PZT-5A piezoelectric powders, the microstructure and electrical properties were improved. The X-ray diffraction (XRD) and scanning electron microscope (SEM) results showed that PZT films with 2% Nb doping exhibited high crystallinity and dense surfaces. The maximum dielectric constant, piezoelectric coefficient d33 of 133(pm V−1), and remnant polarization value of 58(μC cm−2) were obtained in a 2% Nb-dopant. These data were much better than the published results. Roughness and dielectric loss were also improved significantly with 2% Nb dopants.
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