Abstract
The effects of N2O plasma treatment on the performance of excimer-laser-annealed (ELA) polycrystalline silicon thin film transistors (poly-Si TFTs) were investigated. The N2O plasma treatment was conducted following the deposition of the low-temperature gate oxide, resulting in an obvious improvement in the performance of the ELA poly-Si TFTs. This improvement is presumably due to the smoothed oxide/poly-Si interface, the improved gate-oxide quality, and the reduced trap states at the interface and in the poly-Si channel, resulting from the incorporation and passivation reaction of the N2O-plasma-generated nitrogen and oxygen radicals. Moreover, the N2O plasma treatment also improved the stability of the ELA poly-Si TFTs under dc voltage stress.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
