Abstract
This experiment studied the effects of multi-layer Ti/Al electrodes, ohmic groove etching, and annealing temperature on the ohmic characteristics, output characteristics, and surface topography of AlGaN/GaN high electron mobility transistor (HEMT) devices. In the experiment, we prepared the device structure through the linear transmission model. We then used an atomic force microscope, B1500A, and other instruments to test the output characteristic curve and surface roughness of the device under each temperature and structure. After analysis and calculation, it is found that the device with an etched depth of 10 nm in the ohmic groove of the multi-layer Ti/Al electrode obtains the best characteristics when fast annealed at 850 °C for 30 s. The contact resistance value of the improved device is only 54.3% of that of the traditional structure, and the specific contact resistivity is reduced by 71.8% compared with that of the traditional structure. The surface morphology of the improved device is also smoother, and the surface roughness rms value is only 40.5% of that of the traditional structure. When it is applied to the HEMT device, the output current is increased by 40.7% compared with the traditional structure.
Highlights
AlGaN/GaN heterojunction high electron mobility transistors (HEMTs) have attracted many researchers in high frequency, high voltage, and high-power research due to their advantages such as high electron mobility, high saturation velocity, and high breakdown electric field
This experiment systematically studied the ohmic characteristics of the device from multiple angles of single/multilayer Ti/Al electrodes, ohmic groove etching depth, and annealing temperature
Through the study of the ohmic characteristics of the device under different structures and different annealing temperatures and the analysis of the surface morphology, we found that the devices with multi-layer Ti/Al electrode ohmic grooves with a depth of 10 nm during rapid annealing at 850 ○C for 30 s show the best performance in terms of contact resistance, specific contact resistivity, and surface morphology
Summary
AlGaN/GaN heterojunction high electron mobility transistors (HEMTs) have attracted many researchers in high frequency, high voltage, and high-power research due to their advantages such as high electron mobility, high saturation velocity, and high breakdown electric field. They have been widely used in power amplifiers, switching devices, low noise amplifiers, and other integrated circuits.. With the deepening of the application research of AlGaN/GaN heterojunction high electron scitation.org/journal/adv mobility transistors, it has become a research hotspot to explore how to improve the ohmic contact performance and improve the surface morphology in the device structure design and the experimental process Au is used to avoid oxidation and reduce the total contact resistance. With the deepening of the application research of AlGaN/GaN heterojunction high electron scitation.org/journal/adv mobility transistors, it has become a research hotspot to explore how to improve the ohmic contact performance and improve the surface morphology in the device structure design and the experimental process
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