Abstract
When molybdenum is utilized for the construction of arc chambers for ion implanters, the species 98Mo 2+ is co-implanted during 11B 19F + 2 implantation, due to its coincident charge-to-mass ratio. The metal ions are generated as the fluorinated species in the source plasma react with the molybdenum arc chamber components. The peak molybdenum concentration in the substrate, as measured by secondary ion mass spectrometry, increases with increasing source arc current for a given dose. Molybdenum acts as a deep-level impurity, which significantly reduces bipolar transistor gain. The diffusion of molybdenum in silicon is studied and its effect on solid state device performance is discussed. Tantalum is suggested as an alternative source material.
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