Abstract
InGaZnO is easy to absorb moisture, thus leading to the formation of metal-hydroxyl (M-OH) defects. The effects of M-OH on the performance of InGaZnO thin-film transistor (TFT) as well as the methods to improve the performance are investigated by characterizing TFTs with various post-metallization-annealing (PMA) treatments. The formation of M-OH has an adverse influence on the TFT electrical parameters including threshold voltage (V th ), mobility, off-current and sub-threshold swing. M-OH also leads to an abnormal V th shift under a positive-gate bias stress. Forming-gas annealing (N 2 /H 2 = 95%/5%) is effective to reduce the formation of M-OH due to the passivation effect of H 2 and thus can effectively suppress the adverse influence caused by the M-OH. Moreover, due to its extremely strong passivation ability, the formation of M-OH as well as the effects on the TFT performance can be significantly suppressed by fluorine treatment.
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