Abstract
I–V characteristics that are commonly observed in resistive switching memories based on organic or organic–inorganic hybrid materials are investigated using a drift–diffusion model. The characteristic current deflection region at a specific voltage in a high-resistance-state (HRS) is predicted using the drift-diffusion model and compared with the experimental results of methylammonium lead iodide (MALI, CH3NH3PbI3). The accumulation of oppositely charged defects in the Debye layers is found to play a dominant role in determining the shape of the I–V curve in the HRS. The magnitude of the applied voltage at which the deflection in the current occurred is decreased by increasing the voltage sweep rate. This result is attributed to the time-dependent migration of charged defects from the Debye layers to the bulk of the switching materials.
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