Effects of Mn2+ on the electrical resistance of electrolessly plated Ni–P thin-film and its application as embedded resistor

Abstract

The effects of manganese sulfate monohydrate (denoted as MSM) on the properties of electroless Ni–P thin-film were investigated. The properties of Ni–P thin-film were examined by means of atomic force microscopy (AFM), cyclic voltammetry, scanning electron microscopy (SEM), X-ray diffraction, energy-dispersive X-ray spectrometer and X-ray photoelectron spectroscopy. AFM and SEM results showed that MSM had significant influences on the morphology, including the formation of smaller nodules, nano-size particles boundaries on both surface and inside of nodules. Due to the specific topologies, the resistance of Ni–P thin-film deposited with MSM was increased. Based on the characterization results, we summarized that the Mn2+ or Mn2+-compound were primarily confirmed to act as the stabilizer in Ni–P electroless process. Moreover, the verification test for Ni–P thin-film in application as embedded resistor was carried out through electrical, thermal stability examination by means of current–voltage (I–V), temperature coefficient of resistance and thermal shock tests, respectively. Experiment results demonstrated the Ni–P thin-film deposited with MSM is qualified for embedded resistors.