Abstract
Wafer bonding of GaAs and InP using an (NH4)2S treatment are investigated for the effect of the wafer offcut angle on the electrical conductivity of wafer-bonded III-V interfaces. HRTEM and STEM are used to confirm the misorientation of the bonded samples and to compare the interface morphology across the range of relative misorientations. A line ratio at the interface shows that the well-bonded crystalline regions to amorphous oxide inclusions is consistent across all bonded samples, indicating that the degree of misorientation does not affect the level of interface recrystallization at high temperatures. Fitting the zero-bias conductance over a range of temperatures reveals an increase in barrier heights for samples with greater than 4° misoriented bonded pairs. This demonstrates that the out-of-plane relative surface misorientation is a critical parameter to be monitored and thus any in-plane twist as well in order to achieve superior electrical conductivity in direct-bonded multijunction solar applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
