Abstract
Diamond films were grown on SiAlON substrates from different CH 4/H 2 gas mixtures by microwave-activated chemical vapor deposition (MW-CVD), and the effects of gas pressure, methane concentration, microwave power and substrate temperature on growth rate and morphology were examined. Scanning electron microscope pictures showed that at low methane concentrations the synthesized diamond crystals were characterized mainly by triangular (111) facets, whereas at higher methane concentrations (100) facets were predominant. Correlations between diamond morphology, diamond growth rates, homogeneity of the deposition and the size of the plasma ball are given. The effects on diamond growth and diamond morphology with respect to deposition area, gas pressure and the variations in plasma intensity will be discussed.
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