Abstract
Transient epitaxial growth experiments of Hg 1− x Cd x Te on ( 1 0 0 )CdTe substrates by chemical vapor transport (CVT), using HgI 2 as a transport agent, were performed at normal and reduced gravity during the USML-2 flight. The carrier mobility at 77 K of the epitaxial layer grown in microgravity is about twice that of the ground specimen. This result is related to the improved compositional uniformity (IR mapping) and structural quality (X-ray rocking curves) of the space-grown epitaxial layer and islands relative to ground samples. These observations and the lower dislocation density of the growth interface in microgravity demonstrate the effects of residual convective flow on the transport and deposition processes on ground near the solid–vapor interface of this system in the transient growth regime.
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