Abstract
The effects of MgO on nitrogen dissolution and p-type conduction of sol-gel Al-N codoped MgxZn1-xO films were investigated. Substitution of MgO for ZnO significantly increased the solubility of nitrogen in the MgxZn1-xO films. The formation energies of NO and (N2)O were found to decrease with increasing MgO content, resulting in higher concentrations of NO and (N2)O. The acceptor levels of NO were estimated to be about 114 and 163 meV above the valence band maximum, respectively, for x = 0 and x = 0.05 films. The bandgap and the acceptor ionization energy increase with the MgO content, leading to a reduction in hole concentration and an increase in resistivity. The homojunction formed between a Al-N codoped MgxZn1-xO and a n-type Ga0.01Zn0.99O film displayed a typical rectifying behavior with a turn-on voltage of 2V, confirming the p-type conduction of the Al-N codoped MgxZn1-xO films.
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