Abstract
The effects of Mg-doping on the characteristics of semi-polar (112¯2) plane Al0.15Ga0.85N films grown on (101¯0) m-plane sapphire substrates with metal-organic chemical vapor deposition (MOCVD) technique were investigated intensively and systematically. The characterization results showed that the crystalline quality of the (112¯2) plane AlGaN films could be improved by optimizing the Mg-delta-doping process. Whereas, the surface morphology for the samples was monotonously degraded with increasing the Mg-doping level. Meanwhile, a hole concentration as high as 5.4×1017cm−3 were achieved by optimizing the Mg-doping level. Furthermore, the luminescence mechanism of the samples was investigated by photoluminescence spectra at room temperature.
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