Abstract
Vertical type organic thin film transistor (OTFT) using organic semiconductor such as C60 was fabricated. C60 shows n-type semiconducting property and has relatively high electron mobility. Vertical type OTFT using n-type active material has a layered structure of ITO(drain)/C60/metal(gate)/C60/metal(source). The semiconductor layers and electrodes of OTFTs were deposited by vacuum evaporation technique. The static characteristics of the fabricated OTFTs were investigated. Especially, the effects of C60 layer thickness, source electrode and gate electrode on the performance of vertical type OTFTs were studied.
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