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Abstract
We have performed a detailed investigation of the fabrication and switching characteristics of ZnO-based memristive devices. The effects of doping and various metal contacts have been studied. It is observed that, with the use of Al metal contacts and ZnO:Al layers, relatively high ROFF/RON ratios of 200 can be achieved. Much improved device stability and reproducibility, on the other hand, can be realized by using either nominally undoped or Mg-doped ZnO memristive layers. The experimental results may be well explained by an oxygen vacancy formation and migration model. The present work represents an important step in realizing high performance ZnO-based memristive devices for future nonvolatile memory applications.
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