Abstract
Ti Schottky contact (SC) metal with 50 nm and 100 nm thickness on n-GaAs substrate was sputtered by DC magnetron into vacuum unite. It was checked whether the diode parameters changed with SC metal thickness and measurement temperature. As a result of measurements, the potential barrier values decreased while ideality factors remained unchanged with the increasing metal thickness. The results showed that the Ti film thickness has a considerable effect on the barrier potential value. The potential barrier value of the device with thickness of 50 nm was found to be 0.92 and 0.63 eV, and that of 100 nm thickness to be 0.80 and 0.56 eV at 300 and 60 K, respectively. That is, a different of 0.12 eV for the barrier potential was obtained depending on metal thickness at 300 K.
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