Abstract
Tin-doped indium oxide (ITO) films were deposited by sputtering of sintered oxide targets, employing an electron cyclotron resonance (ECR) microwave plasma system. The effects of Ar ion bombardment on crystallographic and electrical properties of the films were investigated with control of the ion energy by submagnetic field application. It was found that ion bombardment with energies lower than ∼ 40 eV enhances crystallization whereas bombardment with higher energies suppresses crystallization. The surface roughness of the film was below 50 Å. The smooth surface formation could be attributed to the microstructural modification arising from ion bombardment.
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