Abstract
Starting with a Kondo lattice model type Hamiltonian, the effects of the magnetic field, electric field, and magnetic anisotropic energy on the magnetic properties of the Fe/GaSb diluted magnetic semiconductor are studied. The analytical technique is employed to analyze magnon dispersion, magnetization, and critical temperature, Tc. The enhancement of the temperature with increasing impurity concentration x and/or with the magnetic field and electric field is established, which is in good agreement with recent experimental observations. It is clearly shown that magnon dispersion and magnetization can be controlled with these fields applied, magnetic anisotropic energy, and impurity concentration alternatively or all together. Due to the inclusion of the magnetic anisotropic energy, we could identify a significant escalation of magnon dispersion/bandgap energy and a slight reduction of magnetization.
Highlights
The realization of materials that combine semiconducting behavior with robust magnetism has long been a dream of material physics.1–3 One strategy for creating systems that are simultaneously semiconducting and magnetic was initiated in the late 1970s
Magnetic properties of the Fe/GaSb diluted magnetic semiconductors (DMSs) system are theoretically investigated using the Kondo lattice model type standard Hamiltonian to explain the influence of an applied electric field (EF), magnetic field (MF), and magnetic anisotropic energy (MAE)
This paper reports the effects of the electric field, magnetic field, and magnetic anisotropy energy on the magnetic properties of the Fe/GaSb diluted magnetic semiconductor
Summary
The realization of materials that combine semiconducting behavior with robust magnetism has long been a dream of material physics. One strategy for creating systems that are simultaneously semiconducting and magnetic was initiated in the late 1970s. One strategy for creating systems that are simultaneously semiconducting and magnetic was initiated in the late 1970s It involves the introduction of local moments into well-understood semiconductors. Since the initial discovery of DMSs in alloyed II–VI semiconductors, reports have been published in investigating electronic, magnetic, optical, thermal, and transport properties in popular magazines as well.. Since the initial discovery of DMSs in alloyed II–VI semiconductors, reports have been published in investigating electronic, magnetic, optical, thermal, and transport properties in popular magazines as well.4 This interest comes from DMSs themselves as good theoretical and experimental subjects, and the prospective for future spintronics applications.. Scitation.org/journal/adv ferromagnetic properties up to a temperature of 300 K and 340 K,7 respectively This indicates that further analysis is required using different techniques. Magnetic properties of the Fe/GaSb DMS system are theoretically investigated using the Kondo lattice model type standard Hamiltonian to explain the influence of an applied electric field (EF), magnetic field (MF), and magnetic anisotropic energy (MAE)
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