Effects of Low-Oxygen-Content Metalorganic Precursors on AlInAs and High Electron Mobility Transistor Structures with the Thick AlInAs Buffer Layer

Abstract

We investigated the effects of low-oxygen-content metalorganic precursors on oxygen impurities and Hall mobility. The oxygen concentration in the AlInAs layer was less than 2×1017 cm-3 under all growth conditions. We confirmed the high mobility of the AlInAs/InP high electron mobility transistors (HEMT) structure with the AlInAs buffer layer (5,500 cm2/V·s at 300 K, and 110,000 cm2/V·s at 77 K). For the AlInAs/GaInAs HEMT structure with the same buffer layer, we obtained the high mobility (12,000 cm2/V·s at 300 K, and 92,000 cm2/V·s at 77 K).