Abstract
A low-temperature activation annealing process following plasma doping (PLAD) was investigated. A dramatic reduction of sheet resistance Rs occurred in the postactivation annealing temperature range of 400°C–480°C after PLAD. The Rs of 30Ω∕sq. and the junction depth Xj of 30nm was obtained without the additional diffusion of a dopant from the postactivation annealing in the fabricated junction. The electrical characteristics of a n+-p junction diode fabricated by PLAD were also improved after low-temperature postannealing.
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