Abstract
Here we introduce the application of low temperature buffer (LTB) layer for the growth of carbon nano walls (CNW) by plasma enhanced chemical vapor deposition (PECVD) method. The facilitation by LTB on the growth of CNW was investigated. The measured electrical properties showed that CNW grown on LTB (L-CNW) has enhanced electrical characteristics compared to as-grown CNW (as-CNW). Raman spectra of L-CNW were compared with as-CNW. The de-convoluted graphitic peaks showed a small deviation from the mean value with regard to change in deposition conditions. The comparison showed enhanced film quality for L-CNW and the graphitization appeared to be more prominent. Moreover, the LTB layer improved the self-alignment of CNWs that enables them to be used as metallic electrodes in surface acoustic wave (SAW) devices and transducers.
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