Abstract

The effect of adding different low melting point compounds on the crystalline phases, microstructure and microwave dielectric properties of the X2SiO4–CaTiO3 (X = Mg, Zn) ceramics was compared. The 0.91Mg2SiO4–0.09CaTiO3 samples doped with 15.0–35.0 wt% ZB glass were unsintered at 950 °C for 3 h in air. The grains were denser, as the 0.91Mg2SiO4–0.09CaTiO3 samples were doped with 12.0 wt% BLB and the 0.95Zn2SiO4–0.05CaTiO3 samples were doped with 4.0 wt% LB or 7.0 wt% BLB at 950 °C for 3 h in air. Adding 2.0–6.0 wt% LB to the 0.95Zn2SiO4–0.05CaTiO3 ceramics, the sintering temperature was lowered to 950 °C, the relative density values of the ceramics were more than 90 %, and the Q × f values were more than 18,000 GHz (f = 7.1 GHz). However, the 0.91Mg2SiO4–0.09CaTiO3 ceramics doped with 4.0–8.0 wt% LB were not dense, and the Q × f values were lower than 6500 GHz (f = 7.1 GHz) at 950 °C for 3 h. For the 0.95Zn2SiO4–0.05CaTiO3 ceramics doped with 6.5–8.5 wt% BLB and the 0.91Mg2SiO4–0.09CaTiO3 ceramics doped with 10.0–14.0 wt% BLB, the relative density of the two kinds of the ceramics can reach to 94 %, and the maximum Q × f values of the ceramics were both more than 11,000 GHz (f = 6.1 GHz).

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