Effects of long range components of random potentials on conductivity in two dimensions

Abstract

Abstract Effects of long range components of random potentials on conductivity in the inversior layer of MOS are discussed. The model on long range potential fluctuations is related to the defects with a dipole moment in SiO2. The long range components modify appreciably the conductivity with short range components only. Assuming that the critical value of g = n(E c ) n 0 (where n(Ec) is the density of states at a mobility edge Ec and n0 is the density of states for Bloch electrons) as 0.84, it is found that σ m σ 0 ranges from 0.17 to 0.15 for reasonable values of the parameters. Here σm is the minimum metallic conductivity and σ 0 = e 2 h .