Abstract
We study the Fano resonance in the E 2-HH 2 absorption line in GaAsGaAlAs quantum wells. Our calculation indicates that this resonance is stronger in wells with larger width and lower barrier height. On the other hand, the PLE measurements and the calculation show that a repulsive and localized perturbation, consisting of an AlAs monolayer inserted at the well center, makes this resonance more discernable and an attractive and localized perturbation, consisting of an InAs monolayer inserted at the same location has an opposite effect.
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