Abstract

Our study focused on examining the behavior of oxide Mg2SiO4 under various liquefied gas temperatures, including 4.22 K (Helium), 77 K (Nitrogen), 83.88 K (Argon), 90 K (Oxygen), 194.3 K (Carbon), and 300 K (room temperature), while maintaining a pressure of 0 GPa. Additionally, we explored the effects of pressures ranging from 0 to −6 GPa at a temperature of 77 K using first principles molecular dynamics simulations. Our findings indicate significant variations in the system’s size, energy, and the lengths of Si-Si, Si-O, O-O, Si-Mg, Mg-O, and Mg-Mg bonds with decreasing temperature at 0 GPa and decreasing pressure at a temperature of 77 K. Moreover, substantial variations were observed in the average coordination number of bonds, the quantity of SiOx, MgOy structural units (where x = 4, 5 and y = 3, 4, 5, 6, 7), and bond angles of Si-O-Si, and Mg-O-Mg under negative pressure while remaining relatively constant across liquefied gas temperatures. Furthermore, we successfully established a linear relationship between temperature, pressure, and the total energy of the system. These insights into the behavior of oxide Mg2SiO4 serve as valuable groundwork for future experimental investigations, particularly in leveraging the material’s potential applications in advanced technological fields.

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