Abstract
Photodarkening in semiconductor-doped glass is considered to be due to photoinduced defects. Effects of light and X-ray irradiation on CdS-doped glass have been reported to investigate the nature of photoinduced defects in CdS-doped glass using ESR (electron spin resonance) and luminescence. The photoinduced defects are different from X-ray induced defects and may be located in glass near CdS nanocrystals.
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