Abstract
Changes in defect energy levels due to symmetric displacements of the neighbours nearest to the defect (breathing mode) have been studied within the tight-binding framework, using the well known k -space Green's-function approach. The results for the A 1 level of Ge, Sb, At and antisite impurities in the cation sites and for the T 2 level of Ga vacancy are presented. The influence of lattice distortion on these levels is found to be appreciable but do not however seem to affect chemical trends.
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