Abstract
A Q-switched ruby laser has been used to heat-treat vapourphase-epitaxial (v.p.e.) GaAs. The characteristic A-centre, a deep trapping level at 0.83 eV, is removed using a laser pulse of energy density 0.3 J cm−2. Trapping levels are observed using deep-level transient spectroscopy (d.l.t.s.).
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