Abstract
AgAlMg (AAM) films with three different atomic percentage compositions are prepared, namely, Ag12Al62Mg26 (denoted as A1AM), Ag22Al46Mg32 (denoted as A2AM), and Ag36Al25Mg39 (denoted as A3AM). In addition, the AAM films are deposited with four different thicknesses, i.e., 3, 6, 9, and 12 nm. The indium-tin oxide thickness is assigned a constant value of 30 nm in every case. The results show that the optical transmittance of the AAM/IAAM films improves (i.e., increases) with a reducing AAM film thickness, while the electrical resistivity improves (i.e., reduces) with an increasing film thickness. It is shown that the IA2AM film with an AMM thickness of 9 nm yields the optimal compromise between the optical transmittance and the electrical resistivity. The as-deposited IAAM films are found to have optical transmittance and electric resistivity values of 65 % and 90 Ω/□, respectively. The IA2AM films are annealed using a near-infrared laser at different pulse energies with a wavelength of 1064 nm and repetition rates ranging from 100 ~ 400 kHz. For both films, the optical and electrical properties are enhanced as the pulse energy increases to a certain critical value due to a transition from an amorphous microstructure to a crystalline structure. Given a repetition rate of 400 kHz and a pulse energy of 1.03 μJ, the optical transmittance and sheet resistance of the IAAM film are found to be 80 % and 15 Ω/□, respectively. The corresponding value of the Haacke figure of merit changed from 0.15 × 10−3 to 7.16 × 10−3 Ω−1 due to the optimal laser annealing conditions.
Highlights
Transparent conducting oxide (TCO) films have a low electrical resistivity and a high optical transmittance in the visible range and are widely used for such electronic applications as flat panel displays, organic light-emitting diodes (OLEDs), cholesteric liquid crystal displays, touch panels, and solar cells
In synthesizing the IAAM films, AgAlMg films with a thickness of 3 ~ 12 nm were deposited on the glass substrate, and an indium-tin oxide (ITO) layer with a thickness of 30 nm was sputtered on the metallics glass (MG) layer
Monolithic AAM metallic glass films and bi-layer ITO/ AAM metallic glass films have been deposited on glass substrates using a magnetron sputtering process
Summary
Transparent conducting oxide (TCO) films have a low electrical resistivity and a high optical transmittance in the visible range and are widely used for such electronic applications as flat panel displays, organic light-emitting diodes (OLEDs), cholesteric liquid crystal displays, touch panels, and solar cells. The use of pure ITO films for optoelectronic devices is cost prohibitive. To address this problem, the literature contains many proposals for minimizing the ITO cost by means of ITO-metal layer-ITO sandwich structures. The literature contains many proposals for minimizing the ITO cost by means of ITO-metal layer-ITO sandwich structures These structures are based on the use of highly conductive metals such as silver or copper as the middle layer. The results have shown that a metal layer thickness of around 5 ~ 20 nm yields both good optical transmittance in the visible light range and a high conductivity [8,9,10,11,12,13]
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