Abstract
The relationship between the Curie temperature and the piezoelectric properties for BiFeO3 epitaxial thin films was investigated by using A-site substitution of La. BiFeO3 and (Bi0.9La0.1)FeO3 epitaxial thin films were deposited by using pulsed laser deposition. The crystallinities, ferroelectric domain structures and piezoelectric properties for the films were investigated. Although the crystallinity was improved by La substitution, the piezoelectric properties decreased. We suggest that La substitution for BiFeO3 epitaxial thin films enlarges the domain size and decreases the 71° domain wall, which reduce the intrinsic contribution to the piezoelectric properties.
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