Abstract
La-doped 0.15BiInO3-0.85PbTiO3 thin films are deposited on SRO/Pt/MgO substrates by RF-magnetron sputtering method. The structures of the thin films are characterized by XRD and AFM. Meanwhile, the effects of La doping concentrations on the piezoelectricity of the films are measured. At the same time, the transverse piezoelectric coefficients of the films are simulated by COMSOL combined with CASTEP calculations. The simulated results are in agreement with the experimental data, which show that the La-doping 0.15BiInO3-0.85PbTiO3 films have optimized properties by properly controlling the La doping compositions. It is found that the effective transverse piezoelectric coefficients have a maximum of -9.35 C/m2 as 3 mol.% La-doping 0.15BiInO3-0.85PbTiO3 films.
Highlights
Ko et al.4 reported that xBiInO3-(1-x)PbTiO3 (simplified as (xBI-(1-x)PT)) (0.10 ≤ x ≤ 0.35) polycrystalline thin films were grown on PbTiO3 layer-buffered silicon substrates by chemical solution deposition, which showed that for 0.15BiInO3-0.85PbTiO3 films, the effective transverse piezoelectric coefficient e31,f was 2.7 C/m2
Lee et al.5 reported that 0.5 mol.% Mndoped xBI-(1-x)PT (0.10 ≤ x ≤ 0.25) thin films were grown on PbTiO3 layer-buffered silicon substrates by pulsed laser deposition, and found that the e31,f was -7.1 C/m2 at x=0.15
To understand the structures of the films, the X-ray diffraction (XRD) patterns of La-doped 0.15BI-0.85PT thin films deposited on MgO substrates via the buffer layers are obtained
Summary
To miniature electronic devices with high performances, a lot of studies focused on developing new thin-film materials. For example, Ko et al. reported that xBiInO3-(1-x)PbTiO3 (simplified as (xBI-(1-x)PT)) (0.10 ≤ x ≤ 0.35) polycrystalline thin films were grown on PbTiO3 layer-buffered silicon substrates by chemical solution deposition, which showed that for 0.15BiInO3-0.85PbTiO3 films, the effective transverse piezoelectric coefficient e31,f was 2.7 C/m2. Ko et al. reported that xBiInO3-(1-x)PbTiO3 (simplified as (xBI-(1-x)PT)) (0.10 ≤ x ≤ 0.35) polycrystalline thin films were grown on PbTiO3 layer-buffered silicon substrates by chemical solution deposition, which showed that for 0.15BiInO3-0.85PbTiO3 films, the effective transverse piezoelectric coefficient e31,f was 2.7 C/m2. Lee et al. reported that 0.5 mol.% Mndoped xBI-(1-x)PT (0.10 ≤ x ≤ 0.25) thin films were grown on PbTiO3 layer-buffered silicon substrates by pulsed laser deposition, and found that the e31,f was -7.1 C/m2 at x=0.15. It was found that as the BiInO3 content x was selected in the range of 0.15-0.20, the xBI-(1-x)PT thin films were with high performances.. 3 mol.% La-doped 0.18BI-0.82PT thin films had the optimized piezoelectric coefficient, where e31 approached to -6.5 C/m2 (i.e., e31,f = -8.7 C/m2)..
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