Abstract
The effect of La 2O 3 incorporation on the spatial trap distribution in HfO 2 gate dielectrics is investigated. The incorporation of La 2O 3 in HfO 2 dielectric has been found to improve the effective mobility in addition to reduced interface-state density. The trap distribution analysis in the HfO 2 layer extracted by combining the charge pumping (CP) method and the low-frequency noise (LFN) method has revealed significant reduction in the amount of traps at HfO 2/SiO 2-interlayer interface and in the HfO 2 layer by La 2O 3 incorporation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
