Abstract
The influence and redistribution of the inert gas Kr in chromium silicide formation have been investigated by MeV He backscattering spectrometry and transmission electron microscopy. It was found that krypton implanted in the chromium film remains stationary with respect to the chromium during silicide formation, but krypton implanted in the silicon substrate accumulate at the silicon/silicide interface. The effect of krypton on the rate of silicide formation is much more pronounced when the krypton is in the chromium rather than in the silicon substrate. The thermal growth of CrSi2 is linear with time in a krypton-free sample, but becomes parabolic when the krypton is incorporated in the silicide at a concentration of 1 at. %. The activation energy associated with Si diffusion through CrSi2 is increased from 1.4±0.1 eV to 2.6±0.1 eV by the presence of krypton in the silicide. The results are interpreted as being due to segregation of krypton on grain boundaries in CrSi2 and subsequent retardation of diffusion along the boundaries.
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