Abstract
We have investigated the behavior of three emission bands located at around 375, 580 and 750 nm in photoluminescence (PL) spectra from n-type GaN films grown by the metalorganic vapor phase epitaxy method in the isochronal annealing process and in a similar process after the films have been hydrogenated using a hydrogen plasma. The PL intensities of the two bands located at around 375 nm and 750 nm vs isochronal annealing temperature show similar rules, but the isochronal annealing behavior of PL intensity for the band located at around 580 nm differs obviously from that of the two bands mentioned above. Hydrogenation has an obvious effect on the isochronal annealing behavior of PL intensity, e.g. decreases the number of peaks in the curves of PL intensity vs isochronal annealing temperature.
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