Abstract
The effects of ion bombardment on the structure and properties of metal films were studied. Ag, Al and Cu films were deposited on Si(111) substrates by ion-assisted deposition (IAD). The bombarding energy was varied in the range of 200–5000 eV, and the current density was varied in the range of 0.2–0.5 mA/cm 2. The metal films were characterized by XRD, RBS, XPS and microindentation. Our results show that the average grain size and properties of metal films display alternate variations with bombarding energy. A Ag-Si intermixing layer of about 300 Å width has been formed by IAD with high energy and large current density. The Ag 3d peak of IAD Ag/Si film is shifted by 1.28 eV toward a higher binding energy at the Ag-Si interface.
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