Abstract

A d.c. reactive magnetron sputtering technique was used to deposit (Ti, Si, Al)N films. The ion current density in the substrate was varied by the superimposition of an axially symmetric external magnetic field between the substrate and target. It was found that the variation of the magnetic field strength induced changes in the ion current density in the substrate with a consequent change in film properties. XRD patterns of sputtered films revealed changes of the lattice parameter (from 0.418 nm to approx. 0.429 nm) with the increase of the ion/atom arrival rate ratio. As already reported for samples prepared by r.f. sputtering, both can be assigned to a cubic B1 NaCl structure, typical for TiN. The lowest lattice parameter corresponds to a metastable phase where Si and Al atoms occupy Ti positions, while the highest lattice parameter corresponds to a system where at least a partial segregation of TiN and SiN x phases already occurred, leading to the formation of a nanocomposite film of the type nc-TiAlN/a-Si 3N 4. The mixture of the metastable phase with nanocomposite coating phases in some samples indicates that, in general, the segregation of TiN and SiN x phases is not complete. Hardness values as high as 45 GPa were measured. Small Si additions to (Ti, Al)N coatings induce a reduction in the pin-on-disk sliding wear rate.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.